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SOT-23-3
Discrete Semiconductor Products

SI2316DS-T1-GE3

LTB

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DocumentsDatasheet
SOT-23-3
Discrete Semiconductor Products

SI2316DS-T1-GE3

LTB

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSI2316DS-T1-GE3
Current - Continuous Drain (Id) @ 25°C2.9 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs7 nC
Input Capacitance (Ciss) (Max) @ Vds215 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)700 mW
Rds On (Max) @ Id, Vgs50 mOhm
Supplier Device PackageSOT-23-3 (TO-236)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id250 µA, 800 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 3000$ 0.26
6000$ 0.25
9000$ 0.23
30000$ 0.23

Description

General part information

SI2316 Series

N-Channel 30 V 2.9A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)

Documents

Technical documentation and resources