SI2316 Series

Catalog

MOSFET N-CH 30V 2.9A SOT23-3

Part	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Technology	Drain to Source Voltage (Vdss)	FET Type	Package / Case	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division SI2316DS-T1-E3	700 mW	-55 °C	150 °C	215 pF	20 V	250 µA 800 mV	4.5 V 10 V	50 mOhm	7 nC	2.9 A	Surface Mount	MOSFET (Metal Oxide)	30 V	N-Channel	SC-59 SOT-23-3 TO-236-3	SOT-23-3 (TO-236)
Vishay General Semiconductor - Diodes Division SI2316BDS-T1-GE3	1.25 W 1.66 W	-55 °C	150 °C		20 V	3 V	4.5 V 10 V	50 mOhm		4.5 A	Surface Mount	MOSFET (Metal Oxide)	30 V	N-Channel	SC-59 SOT-23-3 TO-236-3	SOT-23-3 (TO-236)	350 pF	9.6 nC
Vishay General Semiconductor - Diodes Division SI2316DS-T1-GE3	700 mW	-55 °C	150 °C	215 pF	20 V	250 µA 800 mV	4.5 V 10 V	50 mOhm	7 nC	2.9 A	Surface Mount	MOSFET (Metal Oxide)	30 V	N-Channel	SC-59 SOT-23-3 TO-236-3	SOT-23-3 (TO-236)