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Technical Specifications
Parameters and characteristics for this part
| Specification | FDMS2506SDC |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 49 A, 39 A |
| Drain to Source Voltage (Vdss) | 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 93 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 5945 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 3.3 W, 89 W |
| Rds On (Max) @ Id, Vgs | 1.45 mOhm |
| Supplier Device Package | 8-PQFN (5x6) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3 V |
FDMS2572 Series
N-Channel UltraFET Trench<sup>®</sup> MOSFET 150V, 27A, 47mΩ
| Part | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Mounting Type | Power Dissipation (Max) | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Vgs(th) (Max) @ Id | FET Type | Technology | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | 28 A 49 A | 25 V | Surface Mount | 3.3 W 60 W | 20 V | 4.5 V 10 V | -55 °C | 150 °C | 45 nC | 8-PowerTDFN | 3 V | N-Channel | MOSFET (Metal Oxide) | 8-PQFN (5x6) | ||||
ON Semiconductor | 39 A 49 A | 25 V | Surface Mount | 3.3 W 89 W | 20 V | 4.5 V 10 V | -55 °C | 150 °C | 8-PowerTDFN | 3 V | N-Channel | MOSFET (Metal Oxide) | 8-PQFN (5x6) | 5945 pF | 1.45 mOhm | 93 nC | ||
ON Semiconductor | 39 A 49 A | 25 V | Surface Mount | 3.3 W 89 W | 20 V | 4.5 V 10 V | -55 °C | 150 °C | 8-PowerTDFN | 3 V | N-Channel | MOSFET (Metal Oxide) | 8-PQFN (5x6) | 5945 pF | 1.45 mOhm | 93 nC | ||
 ON Semiconductor | 4.5 A 27 A | 150 V | Surface Mount | 2.5 W 78 W | 20 V | 6 V 10 V | -55 °C | 150 °C | 8-PowerWDFN | 4 V | N-Channel | MOSFET (Metal Oxide) | 8-MLP (5x6) Power56 | 2610 pF | 43 nC | 47 mOhm |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 163 | $ 1.84 | |
| 163 | $ 1.84 | |||
Description
General part information
FDMS2572 Series
UltraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for low rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.
Documents
Technical documentation and resources