FDMS2572 Series

N-Channel UltraFET Trench® MOSFET 150V, 27A, 47mΩ

Catalog

N-Channel UltraFET Trench® MOSFET 150V, 27A, 47mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Mounting Type	Power Dissipation (Max)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Vgs(th) (Max) @ Id	FET Type	Technology	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]
ON Semiconductor FDMS2510SDC	28 A 49 A	25 V	Surface Mount	3.3 W 60 W	20 V	4.5 V 10 V	-55 °C	150 °C	45 nC	8-PowerTDFN	3 V	N-Channel	MOSFET (Metal Oxide)	8-PQFN (5x6)
ON Semiconductor FDMS2506SDC	39 A 49 A	25 V	Surface Mount	3.3 W 89 W	20 V	4.5 V 10 V	-55 °C	150 °C		8-PowerTDFN	3 V	N-Channel	MOSFET (Metal Oxide)	8-PQFN (5x6)	5945 pF	1.45 mOhm	93 nC
ON Semiconductor FDMS2506SDC	39 A 49 A	25 V	Surface Mount	3.3 W 89 W	20 V	4.5 V 10 V	-55 °C	150 °C		8-PowerTDFN	3 V	N-Channel	MOSFET (Metal Oxide)	8-PQFN (5x6)	5945 pF	1.45 mOhm	93 nC
ON Semiconductor FDMS2572	4.5 A 27 A	150 V	Surface Mount	2.5 W 78 W	20 V	6 V 10 V	-55 °C	150 °C		8-PowerWDFN	4 V	N-Channel	MOSFET (Metal Oxide)	8-MLP (5x6) Power56	2610 pF		43 nC	47 mOhm

Catalog

N-Channel UltraFET Trench® MOSFET 150V, 27A, 47mΩ

Key Features

• Max rDS(on)= 47mΩ at VGS= 10V, ID= 4.5A

• Typ Qg= 31nC at VGS= 10 V

• Low Miller Charge

• Optimized efficiency at high frequencies

• UIS Capability (Single pulse and Repetitive pulse)

• RoHS Compliant

Description

UltraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for low rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.