Discrete Semiconductor Products
SUM110N03-04P-E3
ObsoleteVishay General Semiconductor - Diodes Division
MOSFET N-CH 30V 110A TO263
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Discrete Semiconductor Products
SUM110N03-04P-E3
ObsoleteVishay General Semiconductor - Diodes Division
MOSFET N-CH 30V 110A TO263
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DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | SUM110N03-04P-E3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 110 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 5100 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) | 120 W, 3.75 W |
| Rds On (Max) @ Id, Vgs | 4.2 mOhm |
| Supplier Device Package | TO-263 (D2PAK) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3 V |
| Part | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Supplier Device Package | Vgs (Max) | Mounting Type | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Package / Case | Technology | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 2.1 mOhm | 4.5 V 10 V | 2.5 V | TO-263 (D2PAK) | 20 V | Surface Mount | 3.13 W 312 W | N-Channel | 40 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | MOSFET (Metal Oxide) | 18800 pF | -55 °C | 150 °C | 29 A 110 A | 360 nC | ||
Vishay General Semiconductor - Diodes Division | 2.6 mOhm | 4.5 V 10 V | 3 V | TO-263 (D2PAK) | 20 V | Surface Mount | 3.75 W 375 W | N-Channel | 30 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | MOSFET (Metal Oxide) | 12100 pF | -55 °C | 175 ░C | 110 A | |||
Vishay General Semiconductor - Diodes Division | 6 mOhm | 3 V | TO-263 (D2PAK) | Surface Mount | N-Channel | 55 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | MOSFET (Metal Oxide) | 3300 pF | 110 A | 100 nC | |||||||
Vishay General Semiconductor - Diodes Division | 2.3 mOhm | 4.5 V 10 V | 3 V | TO-263 (D2PAK) | 20 V | Surface Mount | 3.75 W 375 W | N-Channel | 40 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | MOSFET (Metal Oxide) | 13600 pF | -55 °C | 175 ░C | 110 A | 360 nC | ||
Vishay General Semiconductor - Diodes Division | 9.5 mOhm | 10 V | 4 V | TO-263 (D2PAK) | 20 V | Surface Mount | 3.75 W 375 W | N-Channel | 100 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | MOSFET (Metal Oxide) | 6700 pF | -55 °C | 175 ░C | 110 A | 160 nC | ||
Vishay General Semiconductor - Diodes Division | 4.2 mOhm | 4.5 V 10 V | 3 V | TO-263 (D2PAK) | 20 V | Surface Mount | 3.75 W 120 W | N-Channel | 30 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | MOSFET (Metal Oxide) | 5100 pF | -55 °C | 175 ░C | 110 A | 60 nC | ||
Vishay General Semiconductor - Diodes Division | 10 V | 4 V | TO-263 (D2PAK) | 20 V | Surface Mount | 15 W 375 W | P-Channel | 40 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | MOSFET (Metal Oxide) | 11300 pF | -55 °C | 175 ░C | 110 A | 280 nC | |||
Vishay General Semiconductor - Diodes Division | 4.2 mOhm | 4.5 V 10 V | 3 V | TO-263 (D2PAK) | 20 V | Surface Mount | 3.75 W 375 W | P-Channel | 40 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | MOSFET (Metal Oxide) | 11200 pF | -55 °C | 175 ░C | 110 A | 350 nC | ||
Vishay General Semiconductor - Diodes Division | 5.3 mOhm | 10 V | 5 V | TO-263 (D2PAK) | 20 V | Surface Mount | 3.75 W 150 W | N-Channel | 40 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | MOSFET (Metal Oxide) | 6700 pF | -55 °C | 175 ░C | 110 A | 95 nC | ||
Vishay General Semiconductor - Diodes Division | 3.4 mOhm | 4.5 V 10 V | 3 V | TO-263 (D2PAK) | 20 V | Surface Mount | 3.75 W 375 W | N-Channel | 60 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | MOSFET (Metal Oxide) | -55 °C | 175 ░C | 110 A | 300 nC | 12900 pF |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
SUM110 Series
N-Channel 30 V 110A (Tc) 3.75W (Ta), 120W (Tc) Surface Mount TO-263 (D2PAK)
Documents
Technical documentation and resources