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TO-263 (D2Pak)
Discrete Semiconductor Products

SUM110N10-09-E3

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Vishay General Semiconductor - Diodes Division

POWER FIELD-EFFECT TRANSISTOR, 110A I(D), 100V, 0.0095OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN

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TO-263 (D2Pak)
Discrete Semiconductor Products

SUM110N10-09-E3

Active
Vishay General Semiconductor - Diodes Division

POWER FIELD-EFFECT TRANSISTOR, 110A I(D), 100V, 0.0095OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN

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DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSUM110N10-09-E3
Current - Continuous Drain (Id) @ 25°C110 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]160 nC
Input Capacitance (Ciss) (Max) @ Vds6700 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)3.75 W, 375 W
Rds On (Max) @ Id, Vgs9.5 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 4.67
10$ 4.38
100$ 2.55
Digi-Reel® 1$ 4.67
10$ 4.38
100$ 2.55
Tape & Reel (TR) 800$ 3.58
1600$ 1.94
2400$ 1.83
5600$ 1.76

Description

General part information

SUM110 Series

N-Channel 100 V 110A (Tc) 3.75W (Ta), 375W (Tc) Surface Mount TO-263 (D2PAK)

Documents

Technical documentation and resources