Discrete Semiconductor Products

G3R75MT12D

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SIC MOSFET N-CH 41A TO247-3

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Discrete Semiconductor Products

Active

SIC MOSFET N-CH 41A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	G3R75MT12D

Current - Continuous Drain (Id) @ 25°C	41 A
Drain to Source Voltage (Vdss)	1.2 kV
Drive Voltage (Max Rds On, Min Rds On)	15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	54 nC
Input Capacitance (Ciss) (Max) @ Vds	1560 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	207 W
Rds On (Max) @ Id, Vgs	90 mOhm
Supplier Device Package	TO-247-3
Vgs (Max) [Max]	22 V
Vgs (Max) [Min]	-10 V
Vgs(th) (Max) @ Id	2.69 V

Part	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Package / Case	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs (Max) [Max]	Vgs (Max) [Min]	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Power Dissipation (Max) [Max]	Vgs (Max)
GeneSiC Semiconductor G3R75MT12K	207 W	2.69 V	90 mOhm	TO-247-4	1.2 kV	1560 pF	Through Hole	22 V	-10 V	54 nC	TO-247-4	15 V	41 A	175 °C	-55 °C	N-Channel
GeneSiC Semiconductor G3R75MT12D	207 W	2.69 V	90 mOhm	TO-247-3	1.2 kV	1560 pF	Through Hole	22 V	-10 V	54 nC	TO-247-3	15 V	41 A	175 °C	-55 °C	N-Channel
GeneSiC Semiconductor G3R75MT12J		2.69 V	90 mOhm	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	1.2 kV	1560 pF	Surface Mount			54 nC	TO-263-7	15 V	42 A	175 °C	-55 °C	N-Channel	224 W	15 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 1200 V 41A (Tc) 207W (Tc) Through Hole TO-247-3

Technical documentation and resources