G3R75 Series

Catalog

SIC MOSFET N-CH 41A TO247-4

Part	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Package / Case	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs (Max) [Max]	Vgs (Max) [Min]	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Power Dissipation (Max) [Max]	Vgs (Max)
GeneSiC Semiconductor G3R75MT12K	207 W	2.69 V	90 mOhm	TO-247-4	1.2 kV	1560 pF	Through Hole	22 V	-10 V	54 nC	TO-247-4	15 V	41 A	175 °C	-55 °C	N-Channel
GeneSiC Semiconductor G3R75MT12D	207 W	2.69 V	90 mOhm	TO-247-3	1.2 kV	1560 pF	Through Hole	22 V	-10 V	54 nC	TO-247-3	15 V	41 A	175 °C	-55 °C	N-Channel
GeneSiC Semiconductor G3R75MT12J		2.69 V	90 mOhm	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	1.2 kV	1560 pF	Surface Mount			54 nC	TO-263-7	15 V	42 A	175 °C	-55 °C	N-Channel	224 W	15 V