Discrete Semiconductor Products

SIS426DN-T1-GE3

Obsolete

MOSFET N-CH 20V 35A PPAK1212-8

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 20V 35A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIS426DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	42 nC
Input Capacitance (Ciss) (Max) @ Vds	1570 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max)	3.7 W, 52 W
Rds On (Max) @ Id, Vgs	4.5 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Technology	FET Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Mounting Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Supplier Device Package
Vishay General Semiconductor - Diodes Division SIS426DN-T1-GE3	MOSFET (Metal Oxide)	N-Channel	35 A	-55 °C	150 °C	3.7 W 52 W	Surface Mount	PowerPAK® 1212-8	1570 pF	4.5 mOhm	20 V	20 V	4.5 V 10 V	42 nC	2.5 V	PowerPAK® 1212-8

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 20 V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources