SIS426 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 20V 35A PPAK1212-8
| Part | Technology | FET Type | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Mounting Type | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | N-Channel | 35 A | -55 °C | 150 °C | 3.7 W 52 W | Surface Mount | PowerPAK® 1212-8 | 1570 pF | 4.5 mOhm | 20 V | 20 V | 4.5 V 10 V | 42 nC | 2.5 V | PowerPAK® 1212-8 |