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TO-263
Discrete Semiconductor Products

NTB082N65S3F

NRND
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP> III, FRFET<SUP>®</SUP>, 650 V, 40 A, 82 MΩ, D2PAK

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TO-263
Discrete Semiconductor Products

NTB082N65S3F

NRND
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP> III, FRFET<SUP>®</SUP>, 650 V, 40 A, 82 MΩ, D2PAK

Technical Specifications

Parameters and characteristics for this part

SpecificationNTB082N65S3F
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs81 nC
Input Capacitance (Ciss) (Max) @ Vds3410 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]313 W
Rds On (Max) @ Id, Vgs82 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 9.50
10$ 6.53
100$ 4.85
Digi-Reel® 1$ 9.50
10$ 6.53
100$ 4.85
Tape & Reel (TR) 800$ 4.44
NewarkEach (Supplied on Cut Tape) 1$ 11.83
10$ 9.38
25$ 9.13
ON SemiconductorN/A 1$ 4.08

Description

General part information

NTB082N65S3F Series

SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate.Consequently, SUPERFET III MOSFET is very suitable for thevarious power systems for miniaturization and higher efficiency.SUPERFET III FRFET MOSFET’s optimized reverse recoveryperformance of body diode can remove additional component andimprove system reliability.