NTB082N65S3F Series

Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 40 A, 82 mΩ, D2PAK

Catalog

Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 40 A, 82 mΩ, D2PAK

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Mounting Type	Technology	Package / Case	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs
ON Semiconductor NTB082N65S3F	650 V	TO-263 (D2PAK)	Surface Mount	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	313 W	-55 °C	150 °C	3410 pF	81 nC	30 V	10 V	N-Channel	5 V	82 mOhm

Catalog

Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 40 A, 82 mΩ, D2PAK

Key Features

• 700 V @ TJ= 150oC

• Ultra Low Gate Charge (Typ. Qg= 81 nC)

• Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF)

• Optimized Capacitance

• Excellent body diode performance (low Qrr, robust body diode)

• Typ. RDS(on)= 70 mΩ

• 100% Avalanche Tested

• RoHS Compliant

Description

SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate.Consequently, SUPERFET III MOSFET is very suitable for thevarious power systems for miniaturization and higher efficiency.SUPERFET III FRFET MOSFET’s optimized reverse recoveryperformance of body diode can remove additional component andimprove system reliability.