FDMA8878-F130

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SINGLE N-CHANNEL POWER TRENCH® MOSFET 30V, 9.0A, 16MΩ

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Discrete Semiconductor Products

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SINGLE N-CHANNEL POWER TRENCH® MOSFET 30V, 9.0A, 16MΩ

Technical Specifications

Parameters and characteristics for this part

Specification	FDMA8878-F130

Current - Continuous Drain (Id) @ 25°C	10 A, 9 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds	720 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-VDFN Exposed Pad
Power Dissipation (Max) [Max]	900 mW
Rds On (Max) @ Id, Vgs	16 mOhm
Supplier Device Package	6-MicroFET (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Single N-Channel Power Trench® MOSFET 30V, 9.0A, 16mΩ

Part	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Technology	Power Dissipation (Max) [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	FET Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FDMA8878-F130	4.5 V 10 V	9 A 10 A	Surface Mount	MOSFET (Metal Oxide)	900 mW	6-VDFN Exposed Pad	720 pF	12 nC	16 mOhm	3 V	N-Channel	6-MicroFET (2x2)	30 V	20 V	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	1000	$ 0.56
ON Semiconductor	N/A	1	$ 0.13

General part information

This N-Channel MOSFET is produced using an advanced Power Trench®process that has been optimized for rDS(on), switching performance.