Specification	HUF76639S3ST

Current - Continuous Drain (Id) @ 25°C	51 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	86 nC
Input Capacitance (Ciss) (Max) @ Vds	2400 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	180 W
Rds On (Max) @ Id, Vgs	26 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	3 V

HUF76639S3S Series

N-Channel Logic Level UltraFET<sup>®</sup> Power MOSFET 100V, 50A, 26mΩ

Part	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Mounting Type	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Supplier Device Package	Technology	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs
ON Semiconductor HUF76639S3ST	100 V	86 nC	2400 pF	16 V	Surface Mount	N-Channel	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	51 A	180 W	TO-263 (D2PAK)	MOSFET (Metal Oxide)	3 V	4.5 V 10 V	26 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel Logic Level UltraFET®Power MOSFET 100 V, 50 A, 26 mΩ

Technical documentation and resources