HUF76639S3S Series

N-Channel Logic Level UltraFET® Power MOSFET 100V, 50A, 26mΩ

Catalog

N-Channel Logic Level UltraFET® Power MOSFET 100V, 50A, 26mΩ

Part	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Mounting Type	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Supplier Device Package	Technology	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs
ON Semiconductor HUF76639S3ST	100 V	86 nC	2400 pF	16 V	Surface Mount	N-Channel	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	51 A	180 W	TO-263 (D2PAK)	MOSFET (Metal Oxide)	3 V	4.5 V 10 V	26 mOhm

N-Channel Logic Level UltraFET® Power MOSFET 100V, 50A, 26mΩ

• Ultra Low On-Resistance- rDS(ON)= 0.026 Ω, VGS= 10 V

• Simulation Models- Temperature Compensated PSPICE®and SABER™ Electrical Models- SPICE and SABER Thermal Impedance Models

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Switching Time vs RGSCurves

N-Channel Logic Level UltraFET®Power MOSFET 100 V, 50 A, 26 mΩ