
Discrete Semiconductor Products
MJE271G
ObsoleteON Semiconductor
2.0 A, 100 V PNP DARLINGTON BIPOLAR POWER TRANSISTOR
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Discrete Semiconductor Products
MJE271G
ObsoleteON Semiconductor
2.0 A, 100 V PNP DARLINGTON BIPOLAR POWER TRANSISTOR
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | MJE271G |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 2 A |
| Current - Collector Cutoff (Max) [Max] | 1 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 1500 |
| Frequency - Transition | 6 MHz |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -65 °C |
| Package / Case | TO-225AA, TO-126-3 |
| Power - Max [Max] | 1.5 W |
| Supplier Device Package | TO-126 |
| Transistor Type | PNP - Darlington |
| Vce Saturation (Max) @ Ib, Ic [Max] | 3 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
MJE270 Series
The Bipolar Power Transistor is designed specifically for use with the MC3419 Solid-State Subscriber Loop Interface Circuit (SLIC).The MJE270 (NPN) and MJE271 (PNP) are complementary devices.
Documents
Technical documentation and resources