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TO-126
Discrete Semiconductor Products

MJE271G

Obsolete
ON Semiconductor

2.0 A, 100 V PNP DARLINGTON BIPOLAR POWER TRANSISTOR

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TO-126
Discrete Semiconductor Products

MJE271G

Obsolete
ON Semiconductor

2.0 A, 100 V PNP DARLINGTON BIPOLAR POWER TRANSISTOR

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMJE271G
Current - Collector (Ic) (Max) [Max]2 A
Current - Collector Cutoff (Max) [Max]1 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]1500
Frequency - Transition6 MHz
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseTO-225AA, TO-126-3
Power - Max [Max]1.5 W
Supplier Device PackageTO-126
Transistor TypePNP - Darlington
Vce Saturation (Max) @ Ib, Ic [Max]3 V
Voltage - Collector Emitter Breakdown (Max) [Max]100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

MJE270 Series

The Bipolar Power Transistor is designed specifically for use with the MC3419 Solid-State Subscriber Loop Interface Circuit (SLIC).The MJE270 (NPN) and MJE271 (PNP) are complementary devices.