MJE270 Series

2.0 A, 100 V NPN Darlington Bipolar Junction Power Transistor

Catalog

2.0 A, 100 V NPN Darlington Bipolar Junction Power Transistor

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic [Max]	Mounting Type	Transistor Type
ON Semiconductor MJE270TG	100 V	6 MHz	150 °C	-65 °C	TO-126	1500	TO-126-3 TO-225AA	1 mA	2 A	1.5 W	3 V	Through Hole
ON Semiconductor MJE271G	100 V	6 MHz	150 °C	-65 °C	TO-126	1500	TO-126-3 TO-225AA	1 mA	2 A	1.5 W	3 V	Through Hole	PNP - Darlington
ON Semiconductor MJE270	100 V	6 MHz	150 °C	-65 °C	TO-126	1500	TO-126-3 TO-225AA	1 mA	2 A	1.5 W	3 V	Through Hole

Catalog

2.0 A, 100 V NPN Darlington Bipolar Junction Power Transistor

Key Features

• High DC Current GainhFE@ 120 mA, 10 V = 1,500 (Min)

• Collector-Emitter Sustaining VoltageVCEO(sus)= 100 Vdc (Min)

• High Safe Operating Area IS/B@ 40 V, 1.0 s = 0.375 A - TO-126

• These Devices are Pb−Free and are RoHS Compliant

Description

The Bipolar Power Transistor is designed specifically for use with the MC3419 Solid-State Subscriber Loop Interface Circuit (SLIC).The MJE270 (NPN) and MJE271 (PNP) are complementary devices.