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8-SOIC
Discrete Semiconductor Products

FDS4501H

Active
ON Semiconductor

COMPLEMENTARY POWERTRENCH<SUP>®</SUP> HALF-BRIDGE MOSFET

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8-SOIC
Discrete Semiconductor Products

FDS4501H

Active
ON Semiconductor

COMPLEMENTARY POWERTRENCH<SUP>®</SUP> HALF-BRIDGE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFDS4501H
ConfigurationN and P-Channel
Current - Continuous Drain (Id) @ 25°C5.6 A, 9.3 A
Drain to Source Voltage (Vdss)20 V, 30 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]27 nC
Input Capacitance (Ciss) (Max) @ Vds1958 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power - Max [Max]1 W
Rds On (Max) @ Id, Vgs18 mOhm
Supplier Device Package8-SOIC
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 415$ 0.72
415$ 0.72
Cut Tape (CT) 1$ 1.80
1$ 1.80
10$ 1.14
10$ 1.14
100$ 0.77
100$ 0.77
500$ 0.61
500$ 0.61
1000$ 0.55
1000$ 0.55
Digi-Reel® 1$ 1.80
1$ 1.80
10$ 1.14
10$ 1.14
100$ 0.77
100$ 0.77
500$ 0.61
500$ 0.61
1000$ 0.55
1000$ 0.55
Tape & Reel (TR) 2500$ 0.50
2500$ 0.50
5000$ 0.47
5000$ 0.47
12500$ 0.45
12500$ 0.45

Description

General part information

FDS4501H Series

This complementary MOSFET half-bridge device is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Documents

Technical documentation and resources