
Discrete Semiconductor Products
FDS4501H
ActiveON Semiconductor
COMPLEMENTARY POWERTRENCH<SUP>®</SUP> HALF-BRIDGE MOSFET
Deep-Dive with AI
Search across all available documentation for this part.

Discrete Semiconductor Products
FDS4501H
ActiveON Semiconductor
COMPLEMENTARY POWERTRENCH<SUP>®</SUP> HALF-BRIDGE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | FDS4501H |
|---|---|
| Configuration | N and P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.6 A, 9.3 A |
| Drain to Source Voltage (Vdss) | 20 V, 30 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 27 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1958 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Power - Max [Max] | 1 W |
| Rds On (Max) @ Id, Vgs | 18 mOhm |
| Supplier Device Package | 8-SOIC |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 415 | $ 0.72 | |
| 415 | $ 0.72 | |||
| Cut Tape (CT) | 1 | $ 1.80 | ||
| 1 | $ 1.80 | |||
| 10 | $ 1.14 | |||
| 10 | $ 1.14 | |||
| 100 | $ 0.77 | |||
| 100 | $ 0.77 | |||
| 500 | $ 0.61 | |||
| 500 | $ 0.61 | |||
| 1000 | $ 0.55 | |||
| 1000 | $ 0.55 | |||
| Digi-Reel® | 1 | $ 1.80 | ||
| 1 | $ 1.80 | |||
| 10 | $ 1.14 | |||
| 10 | $ 1.14 | |||
| 100 | $ 0.77 | |||
| 100 | $ 0.77 | |||
| 500 | $ 0.61 | |||
| 500 | $ 0.61 | |||
| 1000 | $ 0.55 | |||
| 1000 | $ 0.55 | |||
| Tape & Reel (TR) | 2500 | $ 0.50 | ||
| 2500 | $ 0.50 | |||
| 5000 | $ 0.47 | |||
| 5000 | $ 0.47 | |||
| 12500 | $ 0.45 | |||
| 12500 | $ 0.45 | |||
Description
General part information
FDS4501H Series
This complementary MOSFET half-bridge device is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Documents
Technical documentation and resources