FDS4501H Series

Complementary PowerTrench® Half-Bridge MOSFET

Catalog

Complementary PowerTrench® Half-Bridge MOSFET

Part	Mounting Type	Vgs(th) (Max) @ Id	Technology	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Rds On (Max) @ Id, Vgs	Configuration	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FDS4501H	Surface Mount	3 V	MOSFET (Metal Oxide)	1 W	27 nC	8-SOIC	-55 °C	150 °C	8-SOIC	3.9 mm	0.154 in	1958 pF	Logic Level Gate	18 mOhm	N and P-Channel	20 V 30 V	5.6 A 9.3 A
ON Semiconductor FDS4501H	Surface Mount	3 V	MOSFET (Metal Oxide)	1 W	27 nC	8-SOIC	-55 °C	150 °C	8-SOIC	3.9 mm	0.154 in	1958 pF	Logic Level Gate	18 mOhm	N and P-Channel	20 V 30 V	5.6 A 9.3 A

Catalog

Complementary PowerTrench® Half-Bridge MOSFET

Key Features

• Q1 N-Channel9.3A, 30VMax. RDS(on)= 18 mΩ at VGS= 10 V,Max. RDS(on)= 23 mΩ at VGS= 4.5 V

• Q2 P-Channel-5.6A, -20VMax. RDS(on)= 46 mΩ at VGS= -4.5 VMax. RDS(on)= 63 mΩ at VGS= -2.5 V

Description

This complementary MOSFET half-bridge device is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.