Specification	FDC6320C

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	220 mA, 120 mA
Drain to Source Voltage (Vdss)	25 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	0.4 nC
Input Capacitance (Ciss) (Max) @ Vds	9.5 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power - Max [Max]	700 mW
Rds On (Max) @ Id, Vgs	4 Ohm
Supplier Device Package	SuperSOT™-6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

FDC6320C Series

Dual N & P Channel Digital FET 25V

Part	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Power - Max [Max]	FET Feature	Technology	Package / Case	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Configuration
ON Semiconductor FDC6320C	25 V	0.4 nC	-55 °C	150 °C	1.5 V	700 mW	Logic Level Gate	MOSFET (Metal Oxide)	SOT-23-6 Thin TSOT-23-6	120 mA 220 mA	9.5 pF	Surface Mount	4 Ohm	SuperSOT™-6	N and P-Channel
ON Semiconductor FDC6320C	25 V	0.4 nC	-55 °C	150 °C	1.5 V	700 mW	Logic Level Gate	MOSFET (Metal Oxide)	SOT-23-6 Thin TSOT-23-6	120 mA 220 mA	9.5 pF	Surface Mount	4 Ohm	SuperSOT™-6	N and P-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1256	$ 0.24
		1256	$ 0.24

Description

General part information

FDC6320C Series

These dual N & P Channel logic level enhancement mode field effec transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. The device is an improved design especially for low voltage applications as a replacement for bipolar digital transistors in load switching applications. Since bias resistors are not required, this dual digital FET can replace several digital transistors with difference bias resistors.