PSMN0R9-25YLDX
ActiveN-CHANNEL 25 V, 0.85 MΩ, 300 A LOGIC LEVEL MOSFET IN LFPAK56 USING NEXTPOWERS3 TECHNOLOGY
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PSMN0R9-25YLDX
ActiveN-CHANNEL 25 V, 0.85 MΩ, 300 A LOGIC LEVEL MOSFET IN LFPAK56 USING NEXTPOWERS3 TECHNOLOGY
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Technical Specifications
Parameters and characteristics for this part
| Specification | PSMN0R9-25YLDX |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 300 A |
| Drain to Source Voltage (Vdss) | 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 89.8 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 6721 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-669, SC-100 |
| Rds On (Max) @ Id, Vgs | 0.85 mOhm |
| Supplier Device Package | Power-SO8, LFPAK56 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 2.23 | |
| 10 | $ 1.85 | |||
| 100 | $ 1.47 | |||
| 500 | $ 1.25 | |||
| Digi-Reel® | 1 | $ 2.23 | ||
| 10 | $ 1.85 | |||
| 100 | $ 1.47 | |||
| 500 | $ 1.25 | |||
| Tape & Reel (TR) | 1500 | $ 0.96 | ||
Description
General part information
PSMN0R9-25YLD Series
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique "SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.
Documents
Technical documentation and resources
