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LFPAK56/POWER-SO8/SOT669
Discrete Semiconductor Products

PSMN0R9-25YLC,115

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Freescale Semiconductor - NXP

MOSFET N-CH 25V 100A LFPAK56

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LFPAK56/POWER-SO8/SOT669
Discrete Semiconductor Products

PSMN0R9-25YLC,115

Active
Freescale Semiconductor - NXP

MOSFET N-CH 25V 100A LFPAK56

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationPSMN0R9-25YLC,115
Current - Continuous Drain (Id) @ 25°C100 A
Drain to Source Voltage (Vdss)25 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]110 nC
Input Capacitance (Ciss) (Max) @ Vds6775 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSOT-669, SC-100
Power Dissipation (Max)272 W
Rds On (Max) @ Id, Vgs0.99 mOhm
Supplier Device PackagePower-SO8, LFPAK56
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.86
10$ 1.55
100$ 1.23
500$ 1.04
Digi-Reel® 1$ 1.86
10$ 1.55
100$ 1.23
500$ 1.04
Tape & Reel (TR) 1500$ 0.88
3000$ 0.84
7500$ 0.81
10500$ 0.81

Description

General part information

PSMN0R9-25YLD Series

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique "SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Documents

Technical documentation and resources