Discrete Semiconductor Products

STWA88N65M5

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STMicroelectronics

N-CHANNEL 650 V, 0.024 OHM TYP., 84 A MDMESH M5 POWER MOSFET IN TO-247 LONG LEADS PACKAGE

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DocumentsSTWA88N65M5 | Datasheet AN4829 +16

Discrete Semiconductor Products

STWA88N65M5

Active

STMicroelectronics

N-CHANNEL 650 V, 0.024 OHM TYP., 84 A MDMESH M5 POWER MOSFET IN TO-247 LONG LEADS PACKAGE

Deep-Dive with AI

DocumentsSTWA88N65M5 | Datasheet AN4829 +16

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STWA88N65M5

Current - Continuous Drain (Id) @ 25°C	84 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	204 nC
Input Capacitance (Ciss) (Max) @ Vds	8825 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-3
Power Dissipation (Max)	450 W
Rds On (Max) @ Id, Vgs	29 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

STWA88N65M5 Series

N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in TO-247 long leads package

Part	Mounting Type	Rds On (Max) @ Id, Vgs	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs	FET Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Power Dissipation (Max)	Vgs(th) (Max) @ Id
STMicroelectronics STWA88N65M5	Through Hole	29 mOhm	150 °C	204 nC	N-Channel	TO-247-3	650 V	MOSFET (Metal Oxide)	10 V	25 V	84 A	8825 pF	TO-247-3	450 W	5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	552	$ 13.32

Description

General part information

STWA88N65M5 Series

These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency.