Discrete Semiconductor Products
NVTFS012P03P8ZTAG
ObsoleteON Semiconductor
POWER MOSFET, SINGLE, P-CHANNEL, WDFN6, -30 V, 11.3 MΩ @ -10V, -11.7 A
Discrete Semiconductor Products
NVTFS012P03P8ZTAG
ObsoleteON Semiconductor
POWER MOSFET, SINGLE, P-CHANNEL, WDFN6, -30 V, 11.3 MΩ @ -10V, -11.7 A
Technical Specifications
Parameters and characteristics for this part
| Specification | NVTFS012P03P8ZTAG |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 7 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 1535 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerWDFN |
| Power Dissipation (Max) | 860 mW |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 11.3 mOhm |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
NVTFS012P03P8Z Series
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Documents
Technical documentation and resources