NVTFS012P03P8Z Series

Power MOSFET, Single, P-Channel, WDFN6, -30 V, 11.3 mΩ @ -10V, -11.7 A

Catalog

Power MOSFET, Single, P-Channel, WDFN6, -30 V, 11.3 mΩ @ -10V, -11.7 A

Part	FET Type	Mounting Type	Power Dissipation (Max)	Qualification	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Grade	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Supplier Device Package
ON Semiconductor NVTFS012P03P8ZTAG	P-Channel	Surface Mount	860 mW	AEC-Q101	8-PowerWDFN	7 A	25 V	36 nC	-55 °C	175 ░C	30 V	Automotive	1535 pF	MOSFET (Metal Oxide)	3 V	4.5 V 10 V	11.3 mOhm	8-WDFN (3.3x3.3)

Catalog

Power MOSFET, Single, P-Channel, WDFN6, -30 V, 11.3 mΩ @ -10V, -11.7 A

Key Features

• Small Footprint (5x6 mm)

• Low RDS(on)

• Low QGand Capacitance

• NVTFWS012P03P8Z − Wettable Flank Option

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb-Free and are RoHS Compliant

Description

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.