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Discrete Semiconductor Products

CSD13303W1015

Active
Texas Instruments

12-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE WLP 1 MM X 1.5 MM, 20 MOHM

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DSBGA (YZC)
Discrete Semiconductor Products

CSD13303W1015

Active
Texas Instruments

12-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE WLP 1 MM X 1.5 MM, 20 MOHM

Technical Specifications

Parameters and characteristics for this part

SpecificationCSD13303W1015
Current - Continuous Drain (Id) @ 25°C3.5 A
Drain to Source Voltage (Vdss)12 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 2.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]4.7 nC
Input Capacitance (Ciss) (Max) @ Vds715 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseDSBGA, 6-UFBGA
Power Dissipation (Max)1.65 W
Rds On (Max) @ Id, Vgs20 mOhm
Supplier Device Package6-DSBGA (1x1.5)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max) @ Id1.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.53
10$ 0.45
100$ 0.32
500$ 0.25
1000$ 0.20
Digi-Reel® 1$ 0.53
10$ 0.45
100$ 0.32
500$ 0.25
1000$ 0.20
Tape & Reel (TR) 3000$ 0.15
6000$ 0.15
9000$ 0.14
30000$ 0.13
75000$ 0.13
Texas InstrumentsLARGE T&R 1$ 0.30
100$ 0.20
250$ 0.16
1000$ 0.10

Description

General part information

CSD13303W1015 Series

The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.

The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.