CSD13303W1015 Series

12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 20 mOhm

Catalog

12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 20 mOhm

Part	Rds On (Max) @ Id, Vgs	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Mounting Type	Current - Continuous Drain (Id) @ 25°C	FET Type	Power Dissipation (Max)	Package / Case	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]
Texas Instruments CSD13303W1015	20 mOhm	MOSFET (Metal Oxide)	715 pF	1.2 V	Surface Mount	3.5 A	N-Channel	1.65 W	6-UFBGA DSBGA	6-DSBGA (1x1.5)	2.5 V 4.5 V	4.7 nC	8 V	12 V	-55 °C	150 °C

Catalog

12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 20 mOhm

Key Features

• Ultra Low on ResistanceUltra Low Qg and QgdSmall FootprintLow Profile 0.62 mm HeightPb FreeRoHS CompliantHalogen FreeCSP 1 × 1.5 mm Wafer Level PackageUltra Low on ResistanceUltra Low Qg and QgdSmall FootprintLow Profile 0.62 mm HeightPb FreeRoHS CompliantHalogen FreeCSP 1 × 1.5 mm Wafer Level Package

Description

The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.