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LITTELFUSE IXTA36P15P-TRL
Discrete Semiconductor Products

IXTA80N075L2

Active
Littelfuse/Commercial Vehicle Products

POWER MOSFET, N CHANNEL, 75 V, 80 A, 0.024 OHM, TO-263AA, SURFACE MOUNT

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LITTELFUSE IXTA36P15P-TRL
Discrete Semiconductor Products

IXTA80N075L2

Active
Littelfuse/Commercial Vehicle Products

POWER MOSFET, N CHANNEL, 75 V, 80 A, 0.024 OHM, TO-263AA, SURFACE MOUNT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIXTA80N075L2
Drain to Source Voltage (Vdss)75 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs103 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]3600 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)357 W
Rds On (Max) @ Id, Vgs24 mOhm
Supplier Device PackageTO-263AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 15.23
10$ 10.73
100$ 8.18
500$ 7.89
NewarkEach 1$ 14.83
5$ 13.11
10$ 11.40
25$ 9.69
100$ 7.97
500$ 7.73

Description

General part information

IXTA80N075L2 Series

These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost

Documents

Technical documentation and resources