IXTA80N075L2 Series

DiscMSFT NChTrenchGate-Gen2 TO-263D2

Manufacturer: Littelfuse/Commercial Vehicle Products

Catalog

DiscMSFT NChTrenchGate-Gen2 TO-263D2

Part	Vgs(th) (Max) @ Id	Package / Case	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Vgs (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Littelfuse/Commercial Vehicle Products IXTA80N075L2	4.5 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	24 mOhm	3600 pF	N-Channel	20 V	Surface Mount	10 V	TO-263AA	103 nC	75 V	MOSFET (Metal Oxide)	-55 °C	150 °C	357 W
Littelfuse/Commercial Vehicle Products IXTA80N10T	5 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB			N-Channel	20 V	Surface Mount	10 V	TO-263AA		100 V	MOSFET (Metal Oxide)	-55 °C	175 ░C		3040 pF	230 W	60 nC
Littelfuse/Commercial Vehicle Products IXTA80N12T2	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	17 mOhm	4740 pF	N-Channel	20 V	Surface Mount	10 V	TO-263AA	80 nC	120 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	325 W

Catalog

DiscMSFT NChTrenchGate-Gen2 TO-263D2

Key Features

• Designed for linear operation

• Guaranteed FBSOA at 75°C

• Low on-resistances RDS(on)

• Avalanche rated

• International standard packages

• UL 94 V-0 Flammability qualified (molding epoxies)

Description

These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost