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TO-252 DPAK
Discrete Semiconductor Products

FCD600N65S3R0

Active
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP> III, EASY DRIVE, 650 V, 6 A, 600 MΩ, DPAK

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TO-252 DPAK
Discrete Semiconductor Products

FCD600N65S3R0

Active
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP> III, EASY DRIVE, 650 V, 6 A, 600 MΩ, DPAK

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFCD600N65S3R0
Current - Continuous Drain (Id) @ 25°C6 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]11 nC
Input Capacitance (Ciss) (Max) @ Vds465 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]54 W
Rds On (Max) @ Id, Vgs600 mOhm
Supplier Device PackageTO-252 (DPAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id [Max]4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.48
10$ 1.60
100$ 1.09
500$ 0.88
1000$ 0.81
Digi-Reel® 1$ 2.48
10$ 1.60
100$ 1.09
500$ 0.88
1000$ 0.81
Tape & Reel (TR) 2500$ 0.73
5000$ 0.73
NewarkEach 2500$ 0.78
10000$ 0.76
ON SemiconductorN/A 1$ 0.67

Description

General part information

FCD600N65S3R0 Series

SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.