FCD600N65S3R0 Series

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 6 A, 600 mΩ, DPAK

Catalog

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 6 A, 600 mΩ, DPAK

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Technology	Package / Case	Vgs(th) (Max) @ Id [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Mounting Type	FET Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]
ON Semiconductor FCD600N65S3R0	6 A	TO-252 (DPAK)	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	4.5 V	650 V	11 nC	465 pF	-55 °C	150 °C	30 V	Surface Mount	N-Channel	600 mOhm	10 V	54 W

Catalog

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 6 A, 600 mΩ, DPAK

Key Features

• 700 V @ TJ= 150oC

• Low Effective Output Capacitance (Typ. Coss(eff.) = 127 pF)

• Ultra Low Gate Charge (Typ. Qg= 11 nC)

• Optimized Capacitance

• 100% Avalanche Tested

• RoHS Compliant

• Typ. RDS(on)= 493 mΩ

• Internal Gate Resistance: 0.9 Ω

Description

SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.