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Deep-Dive with AI
Search across all available documentation for this part.
DocumentsProduct Change Notice EN
Deep-Dive with AI
DocumentsProduct Change Notice EN
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N3771 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 30 A |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 15 |
| Grade | Military |
| Mounting Type | Through Hole |
| Package / Case | TO-3, TO-204AA |
| Power - Max [Max] | 6 W |
| Qualification | MIL-PRF-19500/518 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 4 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 40 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 130.87 | |
| Microchip Direct | N/A | 1 | $ 140.94 | |
| Newark | Each | 100 | $ 130.87 | |
| 500 | $ 125.84 | |||
Description
General part information
2N3771-Transistor Series
This specification covers the performance requirements for NPN silicon, high-power 2N3771 and 2N3772 transistors for use in high-speed power-switching applications. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/413. The device package outline for this specification sheet is a TO-204AA (formerly TO-3) for all encapsulated device types.
Documents
Technical documentation and resources