onsemi-NGTG15N120FL2WG IGBT Chip Trans IGBT Chip N-CH 1200V 30A 294W 3-Pin(3+Tab) TO-247 Tube

Discrete Semiconductor Products

NGTB15N135IHRWG

Obsolete

ON Semiconductor

TRANS IGBT CHIP N-CH 1350V 30A 357W 3-PIN(3+TAB) TO-247 TUBE

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Search across all available documentation for this part.

DocumentsPackage Drawing-340AL-TO-247 Datasheet +1

Discrete Semiconductor Products

NGTB15N135IHRWG

Obsolete

ON Semiconductor

TRANS IGBT CHIP N-CH 1350V 30A 357W 3-PIN(3+TAB) TO-247 TUBE

Deep-Dive with AI

DocumentsPackage Drawing-340AL-TO-247 Datasheet +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NGTB15N135IHRWG

Current - Collector (Ic) (Max) [Max]	30 A
Current - Collector Pulsed (Icm)	60 A
Gate Charge	156 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	TO-247-3
Power - Max [Max]	357 W
Supplier Device Package	TO-247-3
Switching Energy	420 µJ
Td (on/off) @ 25°C	-
Td (on/off) @ 25°C	170 ns
Test Condition	600 V, 15 A, 10 Ohm, 15 V
Vce(on) (Max) @ Vge, Ic	2.65 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1350 V

NGTB15N135IHR Series

IGBT 1350V 15A FS2-RC Induction Heating

Part	Switching Energy	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge	Vce(on) (Max) @ Vge, Ic	Mounting Type	IGBT Type	Supplier Device Package	Reverse Recovery Time (trr)	Test Condition	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Current - Collector Pulsed (Icm)	Td (on/off) @ 25°C	Td (on/off) @ 25°C
ON Semiconductor NGTB15N120FL2WG	1.2 mJ 370 µJ	TO-247-3	-55 °C	175 ░C	109 nC	2.4 V	Through Hole	Trench Field Stop	TO-247-3	110 ns	10 Ohm 15 A 15 V 600 V	132 ns	64 ns	294 W	1200 V	30 A	60 A
ON Semiconductor NGTB15N135IHRWG	420 µJ	TO-247-3	-40 C	175 °C	156 nC	2.65 V	Through Hole	Trench Field Stop	TO-247-3		10 Ohm 15 A 15 V 600 V			357 W	1350 V	30 A	60 A	-	170 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NGTB15N135IHR Series

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softand fast co−packaged free wheeling diode with a low forward voltage.