NGTB15N135IHR Series

IGBT 1350V 15A FS2-RC Induction Heating

Catalog

IGBT 1350V 15A FS2-RC Induction Heating

Part	Switching Energy	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge	Vce(on) (Max) @ Vge, Ic	Mounting Type	IGBT Type	Supplier Device Package	Reverse Recovery Time (trr)	Test Condition	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Current - Collector Pulsed (Icm)	Td (on/off) @ 25°C	Td (on/off) @ 25°C
ON Semiconductor NGTB15N120FL2WG	1.2 mJ 370 µJ	TO-247-3	-55 °C	175 ░C	109 nC	2.4 V	Through Hole	Trench Field Stop	TO-247-3	110 ns	10 Ohm 15 A 15 V 600 V	132 ns	64 ns	294 W	1200 V	30 A	60 A
ON Semiconductor NGTB15N135IHRWG	420 µJ	TO-247-3	-40 C	175 °C	156 nC	2.65 V	Through Hole	Trench Field Stop	TO-247-3		10 Ohm 15 A 15 V 600 V			357 W	1350 V	30 A	60 A	-	170 ns

Catalog

IGBT 1350V 15A FS2-RC Induction Heating

Key Features

• Extremely Efficient Trench with Fieldstop Technology

• 1350V Breakdown Voltage

• Optimized fo Low Case Temperature in IH Cooker Applications

• Reliable and Cost Effective Single Die Solution

• Consumer Appliances

Description

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softand fast co−packaged free wheeling diode with a low forward voltage.