Discrete Semiconductor Products

TK31J60W,S1VQ

Active

MOSFETS N-CH 30.8A 230W FET 600V 3000PF 86NC

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFETS N-CH 30.8A 230W FET 600V 3000PF 86NC

Technical Specifications

Parameters and characteristics for this part

Specification	TK31J60W,S1VQ

Current - Continuous Drain (Id) @ 25°C	30.8 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	86 nC
Input Capacitance (Ciss) (Max) @ Vds	3000 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max)	230 W
Rds On (Max) @ Id, Vgs	88 mOhm
Supplier Device Package	TO-3P(N)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	3.7 V

Part	Vgs(th) (Max) @ Id	Mounting Type	Supplier Device Package	Power Dissipation (Max)	Package / Case	Drain to Source Voltage (Vdss)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Technology	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]
Toshiba Semiconductor and Storage TK31J60W5,S1VQ	3.7 V	Through Hole	TO-3P(N)	230 W	SC-65-3 TO-3P-3	600 V	N-Channel	3000 pF	150 °C	10 V	105 nC	MOSFET (Metal Oxide)	30.8 A	88 mOhm	30 V
Toshiba Semiconductor and Storage TK31J60W,S1VQ	3.7 V	Through Hole	TO-3P(N)	230 W	SC-65-3 TO-3P-3	600 V	N-Channel	3000 pF	150 °C	10 V		MOSFET (Metal Oxide)	30.8 A	88 mOhm	30 V	86 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 30.8A (Ta) 230W (Tc) Through Hole TO-3P(N)

Technical documentation and resources