TK31J60 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 600 V, 0.099 Ω@10V, TO-3P(N), DTMOSⅣ
| Part | Vgs(th) (Max) @ Id | Mounting Type | Supplier Device Package | Power Dissipation (Max) | Package / Case | Drain to Source Voltage (Vdss) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Technology | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 3.7 V | Through Hole | TO-3P(N) | 230 W | SC-65-3 TO-3P-3 | 600 V | N-Channel | 3000 pF | 150 °C | 10 V | 105 nC | MOSFET (Metal Oxide) | 30.8 A | 88 mOhm | 30 V | |
 Toshiba Semiconductor and Storage | 3.7 V | Through Hole | TO-3P(N) | 230 W | SC-65-3 TO-3P-3 | 600 V | N-Channel | 3000 pF | 150 °C | 10 V | MOSFET (Metal Oxide) | 30.8 A | 88 mOhm | 30 V | 86 nC |