Discrete Semiconductor Products

2N6676

Active

POWER BJT TO-3 ROHS COMPLIANT: YES

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

POWER BJT TO-3 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	2N6676

Current - Collector (Ic) (Max) [Max]	15 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	15 hFE
Mounting Type	Through Hole
Operating Temperature [Max]	200 °C
Operating Temperature [Min]	-65 ░C
Package / Case	TO-3, TO-204AA
Power - Max [Max]	6 W
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max)	300 V

Part	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Transistor Type	Mounting Type	Voltage - Collector Emitter Breakdown (Max)	Package / Case	Vce Saturation (Max) @ Ib, Ic	Qualification	Grade	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]
Microchip Technology JANTXV2N6676	6 W	15 hFE	100 µA	NPN	Through Hole	300 V	TO-204AA TO-3	1 V	MIL-PRF-19500/538	Military	15 A	-65 ░C	200 °C
Microchip Technology 2N6676	6 W	15 hFE	100 µA	NPN	Through Hole	300 V	TO-204AA TO-3	1 V			15 A	-65 ░C	200 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	100	$ 127.93
Newark	Each	100	$ 127.93
		500	$ 123.01

General part information

Bipolar (BJT) Transistor NPN 300 V 15 A 6 W Through Hole TO-204AD (TO-3)

Technical documentation and resources