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ONSONSMMBZ5226ELT1
Discrete Semiconductor Products

MMBT5551

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ON Semiconductor

600 MA, 160 V NPN GENERAL PURPOSE BIPOLAR JUNCTION TRANSISTOR

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ONSONSMMBZ5226ELT1
Discrete Semiconductor Products

MMBT5551

Active
ON Semiconductor

600 MA, 160 V NPN GENERAL PURPOSE BIPOLAR JUNCTION TRANSISTOR

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMMBT5551
Current - Collector (Ic) (Max) [Max]600 mA
Current - Collector Cutoff (Max) [Max]50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]80
Frequency - Transition100 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power - Max [Max]350 mW
Supplier Device PackageSOT-23-3
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic200 mV
Voltage - Collector Emitter Breakdown (Max) [Max]160 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 8435$ 0.04
Cut Tape (CT) 1$ 0.14
1$ 0.12
10$ 0.08
10$ 0.09
100$ 0.05
100$ 0.04
500$ 0.04
500$ 0.03
1000$ 0.03
1000$ 0.02
Digi-Reel® 1$ 0.12
1$ 0.14
10$ 0.08
10$ 0.09
100$ 0.04
100$ 0.05
500$ 0.04
500$ 0.03
1000$ 0.03
1000$ 0.02
Tape & Reel (TR) 5$ 56.40
100$ 47.00
1000$ 37.60
3000$ 0.02
3000$ 0.03
6000$ 0.02
6000$ 0.02
9000$ 0.02
9000$ 0.02
12000$ 0.05
15000$ 0.02
21000$ 0.02
30000$ 0.01
30000$ 0.02
75000$ 0.02
75000$ 0.01
150000$ 0.02
150000$ 0.01
300000$ 0.01

Description

General part information

MMBT5551L Series

The High Voltage NPN Bipolar Transistor is designed for general purpose switching applications. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications.

Documents

Technical documentation and resources