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ONSEMI MMBT5089LT1G.
Discrete Semiconductor Products

MMBT5551LT1G

Active
ON Semiconductor

SINGLE BIPOLAR TRANSISTOR, NPN, 160 V, 600 MA, 225 MW, SOT-23, 3 PINS, SURFACE MOUNT

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ONSEMI MMBT5089LT1G.
Discrete Semiconductor Products

MMBT5551LT1G

Active
ON Semiconductor

SINGLE BIPOLAR TRANSISTOR, NPN, 160 V, 600 MA, 225 MW, SOT-23, 3 PINS, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

SpecificationMMBT5551LT1G
Current - Collector (Ic) (Max) [Max]600 mA
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]80
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power - Max [Max]225 mW
Supplier Device PackageSOT-23-3 (TO-236)
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic200 mV
Voltage - Collector Emitter Breakdown (Max) [Max]160 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.16
10$ 0.10
100$ 0.06
500$ 0.04
1000$ 0.04
Digi-Reel® 1$ 0.16
10$ 0.10
100$ 0.06
500$ 0.04
1000$ 0.04
Tape & Reel (TR) 3000$ 0.03
6000$ 0.03
9000$ 0.03
15000$ 0.02
21000$ 0.02
30000$ 0.02
75000$ 0.02
150000$ 0.02
300000$ 0.02
ON SemiconductorN/A 1$ 0.02

Description

General part information

MMBT5551L Series

The High Voltage NPN Bipolar Transistor is designed for general purpose switching applications. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications.