Discrete Semiconductor Products
FDMS1D2N03DSD
ObsoleteON Semiconductor
POWERTRENCH® POWER CLIP ASYMMETRIC DUAL N-CHANNEL MOSFET, 30 V
Discrete Semiconductor Products
FDMS1D2N03DSD
ObsoleteON Semiconductor
POWERTRENCH® POWER CLIP ASYMMETRIC DUAL N-CHANNEL MOSFET, 30 V
Technical Specifications
Parameters and characteristics for this part
| Specification | FDMS1D2N03DSD |
|---|---|
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| Current - Continuous Drain (Id) @ 25°C | 70 A, 19 A, 37 A, 164 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC |
| Gate Charge (Qg) (Max) @ Vgs | 117 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 4860 pF, 1410 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerWDFN |
| Power - Max | 2.3 W, 2.1 W, 42 W, 26 W |
| Rds On (Max) @ Id, Vgs | 3.25 mOhm, 0.97 mOhm |
| Supplier Device Package | 8-PQFN (5x6) |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3 V, 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
FDMS1D2N03DSD Series
This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency.
Documents
Technical documentation and resources