FDMS1D2N03DSD Series

PowerTrench® Power Clip Asymmetric Dual N-Channel MOSFET, 30 V

Catalog

PowerTrench® Power Clip Asymmetric Dual N-Channel MOSFET, 30 V

Part	Configuration	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Power - Max	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology
ON Semiconductor FDMS1D2N03DSD	2 N-Channel (Dual) Asymmetrical	2.5 V 3 V	30 V	Surface Mount	8-PowerWDFN	19 A 37 A 70 A 164 A	0.97 mOhm 3.25 mOhm	8-PQFN (5x6)	33 nC	117 nC	2.1 W 2.3 W 26 W 42 W	-55 °C	150 °C	1410 pF 4860 pF	MOSFET (Metal Oxide)

Catalog

PowerTrench® Power Clip Asymmetric Dual N-Channel MOSFET, 30 V

Key Features

• Q1: Max RDS(on) = 3.25 mOhm at Vgs = 10V

• Q1: Max RDS(on) = 4.0 mOhm at Vgs = 4.5V

• Q2: Max RDS(on) = 0.97 mOhm at Vgs = 10V

• Q2: Max RDS(on) = 1.25 mOhm at Vgs = 4.5V

• Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses

• MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing

Description

This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency.