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SOT-563-6_463A
Discrete Semiconductor Products

NSBC123EPDXV6T1G

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ON Semiconductor

TRANS DIGITAL BJT NPN/PNP 50V 0.1A 6-PIN SOT-563 T/R

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SOT-563-6_463A
Discrete Semiconductor Products

NSBC123EPDXV6T1G

Active
ON Semiconductor

TRANS DIGITAL BJT NPN/PNP 50V 0.1A 6-PIN SOT-563 T/R

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNSBC123EPDXV6T1G
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce8 hFE
Mounting TypeSurface Mount
Package / CaseSOT-666, SOT-563
Power - Max [Max]500 mW
Resistor - Base (R1)2.2 kOhm
Resistor - Emitter Base (R2)2.2 kOhms
Supplier Device PackageSOT-563
Transistor Type1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.42
Digi-Reel® 1$ 0.42
Tape & Reel (TR) 4000$ 0.08
8000$ 0.07
12000$ 0.06
28000$ 0.06
100000$ 0.05
ON SemiconductorN/A 1$ 0.05

Description

General part information

NSBC123EPDXV6 Series

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.