Discrete Semiconductor Products

NSBC123TPDP6T5G

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ON Semiconductor

BIPOLAR PRE-BIASED / DIGITAL TRANSISTOR, BRT, NPN AND PNP COMPLEMENT, 50 V, 50 V, 100 MA

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Discrete Semiconductor Products

NSBC123TPDP6T5G

Active

ON Semiconductor

BIPOLAR PRE-BIASED / DIGITAL TRANSISTOR, BRT, NPN AND PNP COMPLEMENT, 50 V, 50 V, 100 MA

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NSBC123TPDP6T5G

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	160 hFE
Mounting Type	Surface Mount
Package / Case	SOT-963
Power - Max [Max]	339 mW
Resistor - Base (R1)	2.2 kOhm
Supplier Device Package	SOT-963
Transistor Type	1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

NSBC123EPDXV6 Series

Dual NPN Bipolar Digital Transistor (BRT)

Part	Package / Case	Mounting Type	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Resistor - Base (R1)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Resistor - Emitter Base (R2)	DC Current Gain (hFE) (Min) @ Ic, Vce	Grade	Qualification
ON Semiconductor NSBC123TPDP6T5G	SOT-963	Surface Mount	339 mW	50 V	SOT-963	2.2 kOhm	160 hFE	1 NPN 1 PNP	100 mA	250 mV	500 nA
ON Semiconductor NSBC123JPDXV6T1	SOT-563 SOT-666	Surface Mount	500 mW	50 V	SOT-563	2.2 kOhm	80	1 NPN 1 PNP	100 mA	250 mV	500 nA	47000 Ohms
ON Semiconductor NSBC123EPDXV6T1G	SOT-563 SOT-666	Surface Mount	500 mW	50 V	SOT-563	2.2 kOhm		1 NPN 1 PNP	100 mA	250 mV	500 nA	2.2 kOhms	8 hFE
ON Semiconductor NSBC123TDP6T5G	SOT-963	Surface Mount	339 mW	50 V	SOT-963	2.2 kOhm	160 hFE	2 NPN - Pre-Biased (Dual)	100 mA	250 mV	500 nA
ON Semiconductor NSBC123JDXV6T5G	SOT-563 SOT-666	Surface Mount	500 mW	50 V	SOT-563	2.2 kOhm	80	2 NPN - Pre-Biased (Dual)	100 mA	250 mV	500 nA	47000 Ohms
ON Semiconductor NSBC123JF3T5G	SOT-1123	Surface Mount	254 mW	50 V	SOT-1123	2.2 kOhm	80	NPN - Pre-Biased	100 mA	250 mV	500 nA	47000 Ohms
ON Semiconductor NSBC123EPDXV6T1	SOT-563 SOT-666	Surface Mount	500 mW	50 V	SOT-563	2.2 kOhm		1 NPN 1 PNP	100 mA	250 mV	500 nA	2.2 kOhms	8 hFE
ON Semiconductor NSVBC123JDXV6T5G	SOT-563 SOT-666	Surface Mount	500 mW	50 V	SOT-563	2.2 kOhm	80	2 NPN - Pre-Biased (Dual)	100 mA	250 mV	500 nA	47000 Ohms		Automotive	AEC-Q101
ON Semiconductor NSBC123JDXV6T1G	SOT-563 SOT-666	Surface Mount	500 mW	50 V	SOT-563	2.2 kOhm	80	2 NPN - Pre-Biased (Dual)	100 mA	250 mV	500 nA	47000 Ohms
ON Semiconductor NSBC123TF3T5G	SOT-1123	Surface Mount	254 mW	50 V	SOT-1123	2.2 kOhm	160 hFE	NPN - Pre-Biased	100 mA	250 mV	500 nA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	8000	$ 0.10
		16000	$ 0.08
		24000	$ 0.08
		56000	$ 0.07
Newark	Each (Supplied on Full Reel)	6000	$ 0.08
		12000	$ 0.07
		18000	$ 0.06
		30000	$ 0.06

Description

General part information

NSBC123EPDXV6 Series

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

Documents

Technical documentation and resources