Discrete Semiconductor Products

SIR106DP-T1-RE3

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MOSFET N-CH 100V 16.1A PPAK

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Discrete Semiconductor Products

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MOSFET N-CH 100V 16.1A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIR106DP-T1-RE3

Current - Continuous Drain (Id) @ 25°C	16.1 A, 65.8 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	64 nC
Input Capacitance (Ciss) (Max) @ Vds	3610 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	3.2 W, 83.3 W
Rds On (Max) @ Id, Vgs	8 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.4 V

Part	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Mounting Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	FET Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package
Vishay General Semiconductor - Diodes Division SIR106DP-T1-RE3	10 V	7.5 V	Surface Mount	PowerPAK® SO-8	64 nC	20 V	100 V	N-Channel	MOSFET (Metal Oxide)	3610 pF	3.2 W 83.3 W	8 mOhm	-55 °C	150 °C	3.4 V	16.1 A 65.8 A	PowerPAK® SO-8

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General part information

N-Channel 100 V 16.1A (Ta), 65.8A (Tc) 3.2W (Ta), 83.3W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources