SIR106 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 100V 16.1A PPAK
| Part | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Mounting Type | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Drain to Source Voltage (Vdss) | FET Type | Technology | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 10 V | 7.5 V | Surface Mount | PowerPAK® SO-8 | 64 nC | 20 V | 100 V | N-Channel | MOSFET (Metal Oxide) | 3610 pF | 3.2 W 83.3 W | 8 mOhm | -55 °C | 150 °C | 3.4 V | 16.1 A 65.8 A | PowerPAK® SO-8 |