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Discrete Semiconductor Products

TD9944TG-G

Active
Microchip Technology

240V, 6.0 OHM, DUAL N-CHANNEL, ENHANCEMENT-MODE, VERTICAL DMOS FET

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8-SOIC
Discrete Semiconductor Products

TD9944TG-G

Active
Microchip Technology

240V, 6.0 OHM, DUAL N-CHANNEL, ENHANCEMENT-MODE, VERTICAL DMOS FET

Technical Specifications

Parameters and characteristics for this part

SpecificationTD9944TG-G
Configuration2 N-Channel (Dual)
Drain to Source Voltage (Vdss)240 V
Input Capacitance (Ciss) (Max) @ Vds125 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Rds On (Max) @ Id, Vgs6 Ohm
Supplier Device Package8-SOIC
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.89
25$ 1.57
100$ 1.43
Digi-Reel® 1$ 1.89
25$ 1.57
100$ 1.43
Tape & Reel (TR) 3300$ 1.43
Microchip DirectT/R 1$ 1.89
25$ 1.57
100$ 1.43
1000$ 1.37
5000$ 1.36

Description

General part information

TD9944 Series

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.

Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.