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SOT8070-1
Discrete Semiconductor Products

NSF030120D7A0J

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Nexperia USA Inc.

1200 V, 30 MΩ, N-CHANNEL SIC MOSFET

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SOT8070-1
Discrete Semiconductor Products

NSF030120D7A0J

Active
Nexperia USA Inc.

1200 V, 30 MΩ, N-CHANNEL SIC MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationNSF030120D7A0J
Current - Continuous Drain (Id) @ 25°C67 A
Drain to Source Voltage (Vdss)1.2 kV
Drive Voltage (Max Rds On, Min Rds On)18 V, 15 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs113 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]2600 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-263CA, D2PAK (7 Leads + Tab), TO-263-8
Power Dissipation (Max)306 W
Rds On (Max) @ Id, Vgs45 mOhm
Supplier Device PackageTO-236-7
Vgs (Max) [Max]22 V
Vgs (Max) [Min]-10 V
Vgs(th) (Max) @ Id2.9 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 20.51
10$ 18.85
25$ 18.07
100$ 15.92
250$ 15.14
Digi-Reel® 1$ 20.51
10$ 18.85
25$ 18.07
100$ 15.92
250$ 15.14
N/A 797$ 26.99
Tape & Reel (TR) 800$ 14.16

Description

General part information

NSF030120D7A0 Series

The NSF030120D7A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSontemperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.