NSF030120D7A0 Series

1200 V, 30 mΩ, N-channel SiC MOSFET

Catalog

1200 V, 30 mΩ, N-channel SiC MOSFET

Part	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max) [Max]	Vgs (Max) [Min]	Power Dissipation (Max)	Supplier Device Package	Vgs(th) (Max) @ Id	FET Type	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case
Nexperia USA Inc. NSF030120D7A0J	67 A	2600 pF	45 mOhm	1.2 kV	113 nC	15 V 18 V	22 V	-10 V	306 W	TO-236-7	2.9 V	N-Channel	Surface Mount	175 °C	-55 °C	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA

Catalog

1200 V, 30 mΩ, N-channel SiC MOSFET

Description

The NSF030120D7A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSontemperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.