Discrete Semiconductor Products

MBRA210LT3

Obsolete

ON Semiconductor

DIODE SCHOTTKY 10V 2A SMA

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Search across all available documentation for this part.

DocumentsDatasheet

Discrete Semiconductor Products

MBRA210LT3

Obsolete

ON Semiconductor

DIODE SCHOTTKY 10V 2A SMA

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	MBRA210LT3

Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	700 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-214AC, SMA
Speed	200 mA, 500 ns
Supplier Device Package	SMA
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	10 V
Voltage - Forward (Vf) (Max) @ If	350 mV

MBRA210ET3 Series

Schottky Power Rectifier, Surface Mount, 2.0 A, 10 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Technology	Package / Case	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package
ON Semiconductor MBRA210ET3	10 V	2 A	Surface Mount	500 mV	50 µA	Schottky	DO-214AC SMA	200 mA 500 ns	150 °C	-65 C	SMA
ON Semiconductor MBRA210LT3H	10 V	2 A	Surface Mount	350 mV	700 µA	Schottky	DO-214AC SMA	200 mA 500 ns	125 °C	-55 °C	SMA
ON Semiconductor MBRA210ET3G	10 V	2 A	Surface Mount	500 mV	50 µA	Schottky	DO-214AC SMA	200 mA 500 ns	150 °C	-65 C	SMA
ON Semiconductor MBRA210LT3G	10 V	2 A	Surface Mount	350 mV	700 µA	Schottky	DO-214AC SMA	200 mA 500 ns	125 °C	-55 °C	SMA
ON Semiconductor MBRA210LT3	10 V	2 A	Surface Mount	350 mV	700 µA	Schottky	DO-214AC SMA	200 mA 500 ns	125 °C	-55 °C	SMA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MBRA210ET3 Series

...employing the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Typical applications are ac/dc and dc-dc converters, reverse battery protection, and "O-ring" of multiple supply voltages and any other application where performance and size are critical.

Documents

Technical documentation and resources