MBRA210ET3 Series

Schottky Power Rectifier, Surface Mount, 2.0 A, 10 V

Catalog

Schottky Power Rectifier, Surface Mount, 2.0 A, 10 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Technology	Package / Case	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package
ON Semiconductor MBRA210ET3	10 V	2 A	Surface Mount	500 mV	50 µA	Schottky	DO-214AC SMA	200 mA 500 ns	150 °C	-65 C	SMA
ON Semiconductor MBRA210LT3H	10 V	2 A	Surface Mount	350 mV	700 µA	Schottky	DO-214AC SMA	200 mA 500 ns	125 °C	-55 °C	SMA
ON Semiconductor MBRA210ET3G	10 V	2 A	Surface Mount	500 mV	50 µA	Schottky	DO-214AC SMA	200 mA 500 ns	150 °C	-65 C	SMA
ON Semiconductor MBRA210LT3G	10 V	2 A	Surface Mount	350 mV	700 µA	Schottky	DO-214AC SMA	200 mA 500 ns	125 °C	-55 °C	SMA
ON Semiconductor MBRA210LT3	10 V	2 A	Surface Mount	350 mV	700 µA	Schottky	DO-214AC SMA	200 mA 500 ns	125 °C	-55 °C	SMA

Catalog

Schottky Power Rectifier, Surface Mount, 2.0 A, 10 V

Key Features

• Ultra Low VF

• 1st in the Market Place with a 10 VRSchottky Rectifier

• Compact Package with J–Bend Leads Ideal for Automated Handling

• Highly Stable Oxide Passivated Junction

• Guardring for Over-Voltage Protection

• Optimized for Low Forward Current

• Mechanical Characteristics:Case: Molded Epoxy

• Epoxy Meets UL94, VOat 1/8"

• Weight: 70 mg (approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable

• Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds

• Polarity: Polarity Notch Indicates Cathode Lead

• ESD Ratings: Machine Model = CHuman Body Model = 3A

• Available in 12 mm Tape, 5000 Units per 13 inch Reel

• Marking: B2L1

• All Package are Pb-Free

• AEC-Q101 Qualified and PPAP Capable

• NRVBA Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements

Description

...employing the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Typical applications are ac/dc and dc-dc converters, reverse battery protection, and "O-ring" of multiple supply voltages and any other application where performance and size are critical.